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Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping

Zhenwei Wang1, Hala A Al-Jawhari2, Pradipta K Nayak1

  • 1Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

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|April 21, 2015
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Summary

This study demonstrates a novel method to create both p- and n-type tin oxide thin-film transistors (TFTs) using a single deposition step. This technique lowers processing temperatures, enabling new applications for transparent oxide semiconductors.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electronics Engineering

Background:

  • Transparent oxide semiconductors are crucial for emerging electronic devices.
  • Developing efficient and low-temperature fabrication methods for these materials is essential.
  • Tin oxide (SnO2) is a promising transparent oxide semiconductor with potential for both p-type and n-type conductivity.

Purpose of the Study:

  • To achieve simultaneous fabrication of both p- and n-type tin oxide thin-film transistors (TFTs).
  • To develop a low-temperature processing method for tin oxide TFTs.
  • To demonstrate the feasibility of using these TFTs in complementary metal-oxide-semiconductor (CMOS) circuits.

Main Methods:

  • Single-step deposition of a tin oxide channel layer.
  • Selective deposition of a copper oxide capping layer to tune charge carrier polarity.
  • Low-temperature annealing (190 °C) in air to facilitate oxidation and phase formation.
  • Fabrication of CMOS inverters using the developed tin oxide TFTs.

Main Results:

  • Successfully fabricated both p- and n-type tin oxide TFTs simultaneously.
  • Demonstrated that a copper oxide capping layer acts as an oxygen source, enabling n-type SnO2 formation.
  • Achieved the oxidation process at a significantly lower temperature (190 °C) compared to conventional methods.
  • Fabricated functional CMOS inverters entirely from tin oxide TFTs.

Conclusions:

  • The developed method offers a low-temperature solution for fabricating tin oxide TFTs with tunable carrier polarity.
  • This approach facilitates the integration of transparent oxide semiconductors in advanced electronic devices.
  • The ability to create both p- and n-type TFTs from a single material simplifies fabrication processes.