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Atomic Absorption Spectroscopy: Atomization Methods01:25

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Atomic Absorption Spectroscopy (AAS) atomizes samples through flame atomization or electrothermal atomization. Flame atomization typically involves a nebulizer and spray chamber assembly to combine the sample with a fuel–oxidant mixture, creating a fine aerosol mist that enters a burner. Typically, the fuel and oxidant are combined in an approximately stoichiometric ratio. However, for atoms that are easily oxidized, a fuel-rich mixture may be more advantageous. Only about 5% of the...
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Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...
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Atomic Absorption Spectroscopy: Instrumentation01:22

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An atomic absorption spectrophotometer (AAS) comprises several components: a radiation source, an atomizer, a monochromator, and a detector. The radiation source can be a hollow-cathode lamp (HCL) or an electrodeless-discharge lamp (EDL), both of which provide a narrow emission line of the required wavelength. However, some instruments use continuum sources and high-resolution monochromators to achieve a narrow range of radiation.
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Inductively Coupled Plasma Atomic Emission Spectroscopy: Principle01:19

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Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
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Atomic Absorption Spectroscopy: Radiation and Light Sources01:13

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Related Experiment Video

Updated: Apr 14, 2026

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
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Dual beam organic depth profiling using large argon cluster ion beams.

M Holzweber1, A G Shard2, H Jungnickel3

  • 1BAM - Federal Institute for Material Science and Testing, Division of Surface Analysis and Interfacial Chemistry Unter den Eichen 44-46, 12205, Berlin, Germany.

Surface and Interface Analysis : SIA
|April 21, 2015
PubMed
Summary

Argon cluster sputtering using time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to analyze organic multilayer materials for organic light-emitting diodes. The study found that argon cluster size had a negligible effect on sputter yield and depth resolution.

Keywords:
Ar-GCIBSIMSToF-SIMSargon clusterorganic depth profiling

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Spatial Separation of Molecular Conformers and Clusters
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Spatial Separation of Molecular Conformers and Clusters
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Area of Science:

  • Materials Science
  • Surface Science
  • Analytical Chemistry

Background:

  • Organic light-emitting diodes (OLEDs) utilize organic multilayer structures.
  • Accurate depth profiling is crucial for characterizing OLED materials.
  • 4,4'-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl (NPB) and aluminium tris-(8-hydroxyquinolate) (Alq3) are key OLED components.

Purpose of the Study:

  • To investigate argon cluster sputtering for depth profiling of organic multilayer materials.
  • To evaluate the impact of argon cluster size on sputter yield and depth resolution.
  • To assess the suitability of time-of-flight secondary ion mass spectrometry (TOF-SIMS) for analyzing OLED materials.

Main Methods:

  • Argon cluster sputtering was employed in a dual beam mode using TOF-SIMS.
  • A reference material with NPB matrix and Alq3 marker layers was analyzed.
  • Sputter yield and depth resolution were measured for various Ar-cluster sizes (630–1660 atoms) at 2.5 keV.

Main Results:

  • Argon cluster sputtering demonstrated a constant sputter yield across depth profiles.
  • Sputter yield volumes and depth resolution were quantified for different Ar-cluster sizes.
  • The size of argon clusters (630–1660 atoms) had a negligible effect on the sputtering process in this organic material.

Conclusions:

  • Argon cluster sputtering is a viable technique for depth profiling organic multilayer structures.
  • The choice of argon cluster size within the tested range does not significantly impact sputter performance for these OLED materials.
  • TOF-SIMS with argon cluster sputtering offers a reliable method for characterizing complex organic electronic devices.