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Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding

Hiroki Kamitake1, Mutsunori Uenuma, Naofumi Okamoto

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Researchers developed a high-density nanodot array memory using a biological process. Cage-shaped proteins accommodated cobalt oxide nanodots, enabling efficient fabrication of novel nanodot floating gate memory (NFGM) devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Biotechnology

Background:

  • Developing high-density memory arrays is crucial for advanced electronic devices.
  • Biological self-assembly offers a promising route for precise nanomaterial fabrication.
  • Controlling nanodot size and density is key for memory performance.

Purpose of the Study:

  • To report a novel nanodot (ND) floating gate memory (NFGM) utilizing a biological nano process.
  • To demonstrate the formation of high-density cobalt oxide nanodot arrays using protein templates.
  • To evaluate the performance of NFGM devices based on these bio-fabricated nanodot arrays.

Main Methods:

  • Utilized cage-shaped proteins (ferritin and Dps) displaying SiO2 binding peptide (minTBP-1) to accommodate and position cobalt oxide nanodots.
  • Controlled nanodot diameters by leveraging the cavity sizes of ferritin and Dps proteins.
  • Fabricated high-density nanodot arrays via spin coating and subsequent embedding in metal-oxide-semiconductor (MOS) capacitors.

Main Results:

  • Achieved high-density cobalt oxide nanodot arrays with densities of 6.8 × 10^11 dots cm^-2 (ferritin) and 1.2 × 10^12 dots cm^-2 (Dps).
  • Dps-based nanodot arrays exhibited a wider memory window in MOS capacitors compared to ferritin-based arrays.
  • Fabricated NFGM devices using Dps nanodot arrays demonstrated competent writing/erasing characteristics and long retention times.

Conclusions:

  • Biological nano processes using protein templates enable precise control over nanodot size and high-density array formation.
  • Dps protein-templated cobalt oxide nanodot arrays offer superior performance for NFGM applications.
  • This approach presents a viable method for fabricating high-performance nanodot floating gate memory.