Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced

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Wen-Tsung Huang1, Yiming Li2

  • 1Parallel and Scientific Computing Laboratory, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan ; Institute of Communications Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, 300 Taiwan.

Nanoscale Research Letters
|April 22, 2015
PubMed

Keywords:
Bulk FinFETChannel fin angleCharacteristic fluctuationIdeal channel finNonideal channel finRandom dopant fluctuationShort-channel effectTop-fin widthTrapezoidal

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