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Cracking the Si Shell Growth in Hexagonal GaP-Si Core-Shell Nanowires.

S Conesa-Boj¹, H I T Hauge², M A Verheijen^2,3

¹†École Polytechnique Fédérale de Lausanne (EPFL), Laboratoire des Matériaux Semiconducteurs (LMSC), 1015 Lausanne, Switzerland.

|April 30, 2015

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Researchers discovered new crack defects in semiconductor core-shell nanowires, unrelated to lattice mismatch but caused by thermal history. These cracks can lead to secondary defects, impacting heterostructure synthesis.

Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Semiconductor nanowires enable novel heterostructures due to effective strain relaxation.
Core-shell nanowires are particularly sensitive to strain, with defects influenced by lattice mismatch and dimensions.

Purpose of the Study:

To identify and characterize novel defects in core-shell semiconductor nanowires.
To investigate the origin and consequences of these new defects.

Main Methods:

Experimental synthesis of core-shell semiconductor nanowires.
Microscopic and crystallographic analysis to identify defect structures.
Investigation of defect formation mechanisms under varying growth conditions.

Main Results:

Keywords:

Frank-type dislocation MOVPE core−shell heterostructures crack defect thermal history

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Discovery of crack defects in core-shell nanowires, independent of lattice mismatch.
Demonstration that thermal history during growth is the primary cause of crack formation.
Observation that crack defects induce secondary defects, including stacking faults and dislocations.

Conclusions:

Crack defects represent a new class of structural imperfections in core-shell nanowires.
Optimized synthesis protocols for nanowire heterostructures must account for thermal history to mitigate crack formation.
Understanding these defects is crucial for advancing nanowire-based electronic and optoelectronic devices.