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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
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High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum Kang1, Saien Xie2, Lujie Huang1
1Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA.
Nature
|May 1, 2015
Summary
Researchers developed a new metal-organic chemical vapor deposition technique for large-scale, high-quality monolayer transition-metal dichalcogenide (TMD) films. This enables wafer-scale fabrication of high-performance electronics like transistors and photodetectors.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Semiconducting thin films are crucial for modern electronics and optoelectronics.
- Achieving atomic-scale thickness in traditional semiconductors is challenging.
- Transition-metal dichalcogenides (TMDs) offer unique electronic properties for next-generation devices.
Purpose of the Study:
- To address the challenge of large-scale, homogeneous growth of high-performance monolayer TMD films.
- To enable batch fabrication of atomically thin, high-performance transistors and photodetectors.
- To advance the development of ultrathin and flexible electronics.
Main Methods:
- Developed a novel metal-organic chemical vapor deposition (MOCVD) technique.
- Grew 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide directly on SiO2 substrates.
- Characterized film homogeneity and electrical performance.
Main Results:
- Achieved excellent spatial homogeneity over entire 4-inch wafer-scale films.
- Demonstrated high electron mobility for MoS2: 30 cm²/V·s at room temperature and 114 cm²/V·s at 90 K.
- Successfully fabricated high-performance monolayer MoS2 field-effect transistors with a 99% device yield and vertically stacked transistor devices.
Conclusions:
- The new MOCVD technique enables wafer-scale growth of high-quality monolayer TMDs.
- This breakthrough facilitates the batch fabrication of advanced atomically thin electronic devices.
- Paves the way for the realization of integrated circuitry with enhanced functionalities.
