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Updated: Apr 13, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Rubrene crystal field-effect mobility modulation via conducting channel wrinkling
Marcos A Reyes-Martinez1, Alfred J Crosby1, Alejandro L Briseno1
1Polymer Science and Engineering, University of Massachusetts Amherst, 120 Governor's Drive, Amherst, Massachusetts 01003, USA.
Mechanical strain significantly impacts flexible organic electronics. This study quantifies strain effects on rubrene single-crystal transistors, crucial for developing next-gen flexible devices.
Area of Science:
- Materials Science
- Organic Electronics
- Solid-State Physics
Background:
- Flexible organic electronics are rapidly advancing, necessitating an understanding of mechanical strain's impact on device performance.
- Organic single crystals offer a defect-free platform to systematically study strain effects on electrical properties.
Purpose of the Study:
- To investigate the influence of mechanical deformation on the field-effect mobility of rubrene single crystals.
- To develop a model for quantifying strain and predicting mobility changes in wrinkled organic transistors.
Main Methods:
- Utilizing wrinkling instability to apply controlled local strains to rubrene single-crystal field-effect transistors.
- Employing plate bending theory to model and quantify the net strain at the dielectric/semiconductor interface.
Main Results:
- Field-effect mobility in rubrene single crystals is directly correlated with the net strain at the dielectric/semiconductor interface.
- A predictive model was developed to accurately quantify strain and its effect on mobility.
Conclusions:
- The study establishes a clear structure-function relationship between mechanical strain and electrical performance in organic semiconductors.
- Findings are critical for designing robust and high-performance flexible organic electronic devices.
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