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Updated: Apr 13, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Jan Berger1,2, Evan J Spadafora1, Pingo Mutombo1
1Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200, Prague, Czech Republic.
Atomic manipulation on boron-doped silicon surfaces was achieved using dynamic atomic force microscopy. This process is reversible and allows for high-resolution imaging of atomic vacancies and dopant sites.
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