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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Apr 12, 2026

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells

Published on: July 19, 2019

Charge Dynamics in Solution-Processed Nanocrystalline CuInS2 Solar Cells.

Jonathan E Halpert¹, Frederik S F Morgenstern¹, Bruno Ehrler¹

¹Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom.

|May 8, 2015

Summary

We studied charge dynamics in copper indium sulfide (CIS) nanocrystal solar cells. Deep trapping of holes in colloidal CIS cells reduces performance compared to sol-gel synthesized cells.

Keywords:

CIS charge transfer cupric chalcogenides nanocrystals photovoltaics quantum dot transient absorption trapping

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Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

Area of Science:

Materials Science
Nanotechnology
Photovoltaics

Background:

Solution-processed solar cells offer cost-effective fabrication.
Copper Indium Sulfide (CIS) nanocrystals (NCs) are promising materials for solar energy conversion.
Understanding charge carrier dynamics is crucial for optimizing solar cell efficiency.

Purpose of the Study:

To investigate charge carrier dynamics in CIS/CdS solar cells.
To compare carrier behavior in colloidally synthesized vs. in situ sol-gel synthesized CIS layers.
To identify factors limiting performance in colloidal CIS solar cells.

Main Methods:

Time-resolved spectroscopic techniques to observe photoinduced absorptions.
Transient photocurrent and photovoltage measurements to monitor charge dynamics.
Analysis of carrier dynamics from femtoseconds to milliseconds.

Main Results:

Photoinduced absorptions attributed to mobile hole carriers were observed.
Charge dynamics were successfully monitored across various timescales.
Colloidal CIS NC cells exhibited decreased open-circuit voltage and fill factor compared to sol-gel synthesized cells.

Conclusions:

Deep trapping of holes in colloidal CIS NCs is identified as the cause of reduced solar cell performance.
The synthesis method significantly impacts carrier dynamics and device efficiency.
Sol-gel synthesized CIS films demonstrate superior performance due to reduced charge trapping.