Hybrid III-V/silicon laser with laterally coupled Bragg grating

Area of Science:

• Photonics and Optoelectronics
• Materials Science
• Semiconductor Devices

Background:

• Hybrid integration of III-V materials with silicon photonics offers enhanced functionalities.
• Distributed-feedback (DFB) lasers are crucial for wavelength-selective optical communication.
• Silicon photonics enables compact and cost-effective photonic integrated circuits.

Purpose of the Study:

• To demonstrate a novel compact electrically pumped distributed-feedback hybrid III-V/silicon laser.
• To integrate AlGaInAs/InP gain materials with a silicon waveguide for laser operation.
• To characterize the laser performance, including emission wavelength, side-mode suppression, and threshold current density.

Main Methods:

• Fabrication of a hybrid laser structure using III-V epitaxy on a silicon-on-insulator (SOI) substrate.
• Patterning of a laterally corrugated silicon waveguide for distributed feedback.
• Integration of surface couplers for optical output coupling and characterization.
• Electrical pumping and pulsed operation measurements at 20 °C.

Main Results:

• Successful demonstration of an electrically pumped hybrid III-V/silicon DFB laser.
• Achieved single wavelength emission centered at approximately 1.55µm.
• Obtained a side-mode-suppression ratio (SMSR) greater than 20dB.
• Measured a low threshold current density of 1.54kA/cm².

Conclusions:

• The developed hybrid III-V/silicon laser represents a significant advancement in integrated photonics.
• The device's performance metrics indicate its potential for optical communication and sensing applications.
• This work paves the way for further development of compact and efficient hybrid silicon lasers.