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Increasing single mode power of 1.3-μm VCSELs by output coupling optimization.

A Mereuta, A Caliman, A Sirbu

|May 14, 2015

Summary

This summary is machine-generated.

We enhanced single mode power in 1.3-μm Vertical-Cavity Surface-Emitting Lasers (VCSELs) by optimizing output coupling. This resulted in record power levels and high single mode suppression ratios.

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Area of Science:

Optoelectronics
Semiconductor Devices
Laser Physics

Background:

Vertical-Cavity Surface-Emitting Lasers (VCSELs) are crucial for optical communication.
Optimizing output coupling is essential for enhancing VCSEL performance.
1.3-μm VCSELs are particularly important for fiber optic applications.

Purpose of the Study:

To enhance the single mode emission power of 1.3-μm VCSELs.
To optimize output coupling through precise adjustment of Distributed Bragg Reflector (DBR) reflectivity.
To achieve record-breaking power levels and high single mode performance.

Main Methods:

Selective removal of Distributed Bragg Reflector (DBR) layers in GaAs-based VCSELs.
Fabrication of VCSELs with optimized top DBR reflectivity for output coupling.
Characterization of single mode emission power and side mode suppression ratio (SMSR).

Main Results:

Achieved record single mode emission power of 6.8-mW at room temperature.
Demonstrated 2.8-mW single mode power at 80°C.
Obtained a single mode suppression ratio exceeding 30 dB.

Conclusions:

Selective DBR layer removal is an effective method for optimizing output coupling in VCSELs.
The optimized VCSELs exhibit superior single mode power and spectral purity.
This work paves the way for higher performance 1.3-μm VCSELs for demanding applications.