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Increasing single mode power of 1.3-μm VCSELs by output coupling optimization
Optics Express
|May 14, 2015
Summary
We enhanced single mode power in 1.3-μm Vertical-Cavity Surface-Emitting Lasers (VCSELs) by optimizing output coupling. This resulted in record power levels and high single mode suppression ratios.
Area of Science:
- Optoelectronics
- Semiconductor Devices
- Laser Physics
Background:
- Vertical-Cavity Surface-Emitting Lasers (VCSELs) are crucial for optical communication.
- Optimizing output coupling is essential for enhancing VCSEL performance.
- 1.3-μm VCSELs are particularly important for fiber optic applications.
Purpose of the Study:
- To enhance the single mode emission power of 1.3-μm VCSELs.
- To optimize output coupling through precise adjustment of Distributed Bragg Reflector (DBR) reflectivity.
- To achieve record-breaking power levels and high single mode performance.
Main Methods:
- Selective removal of Distributed Bragg Reflector (DBR) layers in GaAs-based VCSELs.
- Fabrication of VCSELs with optimized top DBR reflectivity for output coupling.
- Characterization of single mode emission power and side mode suppression ratio (SMSR).
Main Results:
- Achieved record single mode emission power of 6.8-mW at room temperature.
- Demonstrated 2.8-mW single mode power at 80°C.
- Obtained a single mode suppression ratio exceeding 30 dB.
Conclusions:
- Selective DBR layer removal is an effective method for optimizing output coupling in VCSELs.
- The optimized VCSELs exhibit superior single mode power and spectral purity.
- This work paves the way for higher performance 1.3-μm VCSELs for demanding applications.
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