Continuous-wave operation up to 20 °C of deep-ridge npn-InGaAsP/InP multiple quantum well transistor laser emitting at 1.5-μm wavelength

We report continuous-wave (CW) operation up to 20 °C of 1.5-μm wavelength npn-InGaAsP/InP multiple quantum well (MQW) transistor laser (TL) with a deep-ridge structure. With CW laser emission, the common emitter current gain of the device can be over 3.5, which is significantly larger than those of the previously reported long wavelength TLs. It is found that at low base current, the laser operation occurs on the first excited state of the MQWs. At high base current, however, the device shows stimulated emissions on the ground state transition. The trend is contrary to what has been observed in the GaAs based TLs and is explained by the change of carrier flow at different base currents.