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Updated: Apr 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
Mykola Telychko1, Jan Berger2, Zsolt Majzik3
1Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic ; Charles University, Faculty of Mathematics and Physics, V Holešovičkách 2, Praha 8, Czech Republic.
Abstract:
We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

