Related Experiment Video
Updated: Apr 12, 2026

11:24
Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
17.5K
Flexible Boron-Doped Laser-Induced Graphene Microsupercapacitors
Zhiwei Peng, Ruquan Ye, Jason A Mann
1⊥Second Baptist School, 6410 Woodway Drive, Houston, Texas 77057, United States.
ACS Nano
|May 16, 2015
Summary
Boron-doped porous graphene, prepared via laser induction, significantly enhances energy storage for flexible microsupercapacitors. This novel material offers 3x higher capacitance and 5-10x greater energy density than undoped alternatives.
Area of Science:
- Materials Science
- Electrochemistry
- Energy Storage
Background:
- Heteroatom-doped graphene is crucial for energy storage device electrodes.
- Developing efficient doping methods for graphene is an ongoing research area.
Purpose of the Study:
- To develop a facile method for preparing boron-doped porous graphene.
- To fabricate and evaluate flexible microsupercapacitors using this material.
Main Methods:
- Laser induction process using boric acid-containing polyimide sheets in ambient air.
- Fabrication of patterned active electrodes for microsupercapacitors.
Main Results:
- Achieved boron-doped porous graphene via a simple laser induction method.
- Boron doping increased areal capacitance by 3x compared to undoped graphene.
- Energy density increased 5-10x across various power densities.
- Demonstrated excellent cyclability and mechanical flexibility in the microsupercapacitors.
Conclusions:
- Boron-doped laser-induced graphene is a promising material for high-performance flexible microsupercapacitors.
- The facile ambient air preparation method is suitable for scalable microelectronics fabrication.
- The enhanced electrochemical performance highlights the potential of doped graphene in advanced energy storage.
Related Concept Videos
MOS Capacitor
1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K
Capacitor With A Dielectric
5.5K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
5.5K

