Considerations on recombination losses in ionization chambers using pulsed electron beams with beam scanning

Based on Boag's theory, referring to saturation effects in ionization chambers with pulsed electron beams, we developed a simple method of determining recombination losses. The correction factors for chamber readings result from slope and intercept of a regression line M1/3 = f(M/V) obtained with at least two different chamber voltages, V, and chamber readings, M. The deviation of these correction factors, compared with those of Boag's precise theory, does not exceed +/- 0.5%.