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Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

Meng-Yen Tsai1, Alexey Tarasov1, Zohreh R Hesabi1

  • 1†School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

ACS Applied Materials & Interfaces
|May 27, 2015
PubMed

Keywords:
TMDCfield-effect transistorflexible electronicsgauge factorpiezoresistive strain sensingtransition metal dichalcogenidewafer-scale MoS2

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