Indirect localization of a magnetic domain wall mediated by quasi walls

The manipulation of magnetic domain walls in thin films and nanostructures opens new opportunities for fundamental and applied research. But controlling reliably the position of a moving domain wall still remains challenging. So far, most of the studies aimed at understanding the physics of pinning and depinning processes in the magnetic layer in which the wall moves (active layer). In these studies, the role of other magnetic layers in the stack has been often ignored. Here, we report an indirect localization process of 180° domain walls that occurs in magnetic tunnel junctions, commonly used in spintronics. Combining Scanning Transmission X-Ray Microscopy and micromagnetic simulations, magnetic configurations in both layers are resolved. When nucleating a 180° domain wall in the active layer, a quasi wall is created in the reference layer, atop the wall. The wall and its quasi wall must then be moved or positioned together, as a unique object. As a mutual effect, a localized change of the magnetic properties in the reference layer induces a localized quasi wall in the active layer. The two types of quasi walls are shown to be responsible for an indirect localization process of the 180° domain wall in the active layer.