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Published on: June 18, 2013
Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on
Wei Zheng1, Feng Huang1, Ruisheng Zheng2
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
Abstract:
A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.

