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Quantum Anomalous Hall Effect in Graphene-based Heterostructure.

Jiayong Zhang1, Bao Zhao1, Yugui Yao2

  • 1State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) &Department of Physics, Fudan University, Shanghai 200433, China.

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This study predicts the Quantum Anomalous Hall (QAH) effect in a graphene-antiferromagnetic insulator heterostructure. This finding offers potential for developing advanced low-power electronics.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Quantum phenomena

Background:

  • The Quantum Anomalous Hall (QAH) effect is crucial for low-power electronics.
  • Graphene heterostructures are promising platforms for novel electronic properties.

Purpose of the Study:

  • To predict the QAH effect in a graphene/RbMnCl3 heterostructure.
  • To investigate the mechanisms inducing the QAH effect in this system.
  • To explore methods for enhancing the QAH gap.

Main Methods:

  • Density-functional theory (DFT) calculations.
  • Wannier function analysis.
  • First-principles simulations.

Main Results:

  • A significant exchange field (~280 meV) and enhanced Rashba spin-orbit coupling induced in graphene.
  • Opening of a topologically nontrivial QAH gap.
  • Identification of strategies to enhance the QAH gap by an order of magnitude.

Conclusions:

  • The proposed graphene/RbMnCl3 heterostructure is a viable candidate for experimental observation of the QAH effect.
  • This system holds promise for future low-power electronic applications.
  • Further research can optimize the heterostructure for enhanced QAH properties.