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Updated: Oct 13, 2026

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
Published on: June 2, 2017
Mechanical characterization between room temperature and 1000 °C of SiC free-standing thin films by a novel
D Leisen1, R Rusanov2, F Rohlfing2
1Institute for Applied Materials, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany.
Abstract:
A novel high-temperature micro-tensile setup allows the characterization of the elastic and plastic as well as creep behavior of free-standing thin films at temperatures of up to 1000 °C. Correspondingly, a new layout for free-standing thin film tensile test structures has been developed, enabling accurate self-alignment upon loading. Furthermore, a differential optical strain measurement technique as well as optimizations of the optical path has been implemented, providing a strain resolution of well below 1 × 10(-4) at 1000 °C. Two different polycrystalline SiC free-standing thin films have been investigated in tension to acquire stress-strain data and corresponding Young's modulus at up to 1000 °C. The high sensitivity of the strain measurement technique makes it also possible to identify creep strains in the high-temperature regime.
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