Related Experiment Video
Updated: Apr 11, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Strain-induced coupling of electrical polarization and structural defects in SrMnO3 films
Carsten Becher1, Laura Maurel2, Ulrich Aschauer1
1Department of Materials, ETH Zürich, Vladimir-Prelog-Weg 5, 8093 Zurich, Switzerland.
Abstract:
Local perturbations in complex oxides, such as domain walls, strain and defects, are of interest because they can modify the conduction or the dielectric and magnetic response, and can even promote phase transitions. Here, we show that the interaction between different types of local perturbations in oxide thin films is an additional source of functionality. Taking SrMnO3 as a model system, we use nonlinear optics to verify the theoretical prediction that strain induces a polar phase, and apply density functional theory to show that strain simultaneously increases the concentration of oxygen vacancies. These vacancies couple to the polar domain walls, where they establish an electrostatic barrier to electron migration. The result is a state with locally structured room-temperature conductivity consisting of conducting nanosized polar domains encased by insulating domain boundaries, which we resolve using scanning probe microscopy. Our 'nanocapacitor' domains can be individually charged, suggesting stable capacitance nanobits with a potential for information storage technology.
More Related Videos
07:03Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
06:49Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
Published on: April 12, 2019
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Dielectric Polarization in a Capacitor
Atomic Nuclei: Nuclear Relaxation Processes
Potential Due to a Polarized Object