Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

845
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
845
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Strain-induced high Curie temperature and perpendicular magnetic anisotropy in a 2D ferromagnetic FePd<sub>2</sub>Te<sub>2</sub> monolayer.

Physical chemistry chemical physics : PCCP·2026
Same author

Photon counting statistics in the presence of spectral diffusion induced by nonequilibrium environmental fluctuations.

The Journal of chemical physics·2026
Same author

Janus MoXY (X/Y = S, Se, Te) monolayers for photocatalytic water splitting: Performance investigation and regulation via first-principles and nonadiabatic molecular dynamics.

The Journal of chemical physics·2026
Same author

Mechanism of ferromagnetism and valley properties in monolayer TiSeCl.

The Journal of chemical physics·2025
Same author

Hydrogel based mini-eye patch: A solution for noninvasive monitoring of tear glucose and pH.

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy·2025
Same author

Preparation of cellulose based hydrogel 3D SERS flexible substrate for the detection of urea in sweat.

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy·2025

Related Experiment Video

Updated: Apr 11, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K

A scheme for a single molecule phase-shift gate in a solid matrix.

Xiao-Dong Cui1, Yujun Zheng1

  • 1School of Physics, Shandong University, Jinan 250100, China.

The Journal of Chemical Physics
|June 8, 2015
PubMed
Summary

We present a method for creating a quantum phase-shift gate using a single molecule. This approach effectively suppresses spontaneous decay, preserving the geometric phase for extended periods.

Area of Science:

  • Quantum computing
  • Molecular physics
  • Solid-state physics

Background:

  • Implementing quantum gates is crucial for quantum computation.
  • Single molecules in solid matrices offer potential as qubits.
  • Spontaneous decay limits the coherence time of quantum states.

Purpose of the Study:

  • To propose a feasible scheme for a phase-shift gate using a single molecule.
  • To investigate methods for suppressing spontaneous decay in molecular qubits.

Main Methods:

  • Utilizing a two-state single molecule in a solid matrix.
  • Employing a non-Hermitian quantum model to include spontaneous decay.
  • Controlling geometric phase (γ) with laser and radio-frequency fields.

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Experiment Videos

Last Updated: Apr 11, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Main Results:

  • A feasible scheme for a phase-shift gate ((1 0) (0 eiγ)) is proposed.
  • Spontaneous decay is effectively suppressed by coupling the radio-frequency field with the molecular dipole difference.
  • Geometric phase preservation is achieved for a considerably long waiting time.

Conclusions:

  • The proposed scheme offers a viable route for implementing molecular-based quantum gates.
  • Suppression of spontaneous decay enhances the stability and potential application of molecular qubits.
  • This work contributes to the development of robust quantum information processing technologies.