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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Stable p-type properties of single walled carbon nanotubes by electrochemical doping
Chang-Soo Park1, Cheol Jin Lee2, Eun Kyu Kim1
1Department of Physics and Research Institute for Natural Science, Hanyang University, Seoul 133-791, Republic of Korea. ek-kim@hanyang.ac.kr.
Abstract:
We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method. The Raman spectroscopy showed the upshift of the G-band when the applied potential increased. Furthermore, the carbon core level shifted as much as 0.14 eV in binding energy of XPS measurement, which is an evidence of p-type doping with a Fermi level change. The highly doped SWCNTs at an applied potential of 1.5 V during the electrochemical doping process showed long time stability, as long as 28 days.

