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Updated: Apr 11, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Experimental verification of electro-refractive phase modulation in graphene
Muhammad Mohsin1, Daniel Neumaier1, Daniel Schall1
1Advanced Microelectronic Center Aachen (AMICA), Applied Micro and Optoelectronic (AMO) GmbH, Otto-Blumenthalstr. 25, 52074 Aachen, Germany.
Abstract:
Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.

