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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Experimental verification of electro-refractive phase modulation in graphene.
Muhammad Mohsin1, Daniel Neumaier1, Daniel Schall1
1Advanced Microelectronic Center Aachen (AMICA), Applied Micro and Optoelectronic (AMO) GmbH, Otto-Blumenthalstr. 25, 52074 Aachen, Germany.
Scientific Reports
|June 11, 2015
Summary
Graphene enables tunable optical properties for opto-electronic devices. This study demonstrates electro-refractive phase modulation in graphene, showing its potential for competitive on-chip applications.
Area of Science:
- Optoelectronics
- Materials Science
- Photonics
Background:
- Graphene exhibits tunable and wideband optical properties, making it a promising material for optoelectronic devices.
- Phase modulators are crucial components in photonic integrated circuits.
Purpose of the Study:
- To demonstrate and characterize electro-refractive phase modulation in graphene.
- To provide design guidelines for graphene-based phase modulators for on-chip applications.
Main Methods:
- Integration of a gated graphene layer into a silicon-waveguide Mach-Zehnder interferometer.
- Experimental extraction and simulation of key phase modulator parameters (effective refractive index change, insertion loss, absorption change).
Main Results:
- Successful demonstration of electro-refractive phase modulation in graphene across wavelengths of 1530 to 1570 nm.
- Experimental results for key modulator parameters were accurately reproduced by simulations.
- Design guidelines were established to enhance graphene device performance.
Conclusions:
- Graphene is a viable material for developing high-performance phase modulators.
- Graphene-based phase modulators show potential to be competitive with existing silicon-based technologies for on-chip applications.
