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Related Experiment Video

Updated: Apr 11, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

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An all-silicon single-photon source by unconventional photon blockade.

Hugo Flayac1, Dario Gerace2, Vincenzo Savona1

  • 1Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

Scientific Reports
|June 11, 2015
PubMed
Summary

Researchers developed a novel silicon device for compact, stable, room-temperature single-photon sources. This breakthrough utilizes quantum interference and nonlinearity in coupled cavities, enabling efficient photon generation at low input powers.

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Area of Science:

  • Quantum optics and photonics
  • Integrated photonics
  • Silicon photonics

Background:

  • Existing silicon-based single-photon sources face limitations in room-temperature operation, stability, and on-chip integration.
  • Current methods often rely on nonlinear parametric processes requiring high input energy and large footprints.
  • A scalable, on-chip architecture for compact and stable single-photon generation remains a significant challenge.

Purpose of the Study:

  • To propose and demonstrate an all-silicon device for generating single photons at room temperature.
  • To overcome the limitations of existing silicon-based photon sources through a novel physical mechanism.
  • To enable compact, stable, and scalable on-chip single-photon generation for integrated photonic circuits.

Main Methods:

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Last Updated: Apr 11, 2026

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  • Utilizing the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities.
  • Implementing an unconventional photon blockade mechanism to achieve antibunched radiation.
  • Demonstrating operation under pulsed optical excitation for practical device applications.

Main Results:

  • Achieved single-photon generation with antibunched radiation at extremely low input powers.
  • Developed a reliable protocol for pulsed optical excitation, suitable for device implementation.
  • Proposed a state-of-the-art implementation in a silicon-based photonic crystal integrated circuit.

Conclusions:

  • The proposed device offers a new paradigm for realizing efficient, room-temperature single-photon sources in silicon.
  • The novel approach outperforms existing parametric devices in terms of input power and footprint area.
  • This work paves the way for scalable, on-chip integration of compact and stable single-photon emitters.