Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

841
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
841
MOS Capacitor01:25

MOS Capacitor

1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Predictive risk factors of recurrence in breast cancer after neoadjuvant treatment: the NEORISK study.

Future oncology (London, England)·2025
Same author

The burden of some of the most common zoonoses in primary care: a population-based study in Italy.

Postgraduate medical journal·2025
Same author

Human monoclonal antibodies targeting subdominant meningococcal antigens confer cross-protection against gonococcus.

Science translational medicine·2025
Same author

Glucagon-Like Peptide-1 receptor agonists, dual GIP/GLP-1 receptor agonist tirzepatide and suicidal ideation and behavior: A systematic review of clinical studies and pharmacovigilance reports.

Diabetes & metabolic syndrome·2025
Same author

State of the Art and Consensus Statements by Healthcare Providers, Patients, and Caregivers on Continuous Glucose Monitoring in Liver Glycogen Storage Diseases.

Journal of inherited metabolic disease·2025
Same author

Immunomodulatory effects of dental pulp stem cells on lymphocytes and monocytes from patients with rheumatoid arthritis.

Clinical and experimental rheumatology·2025

Related Experiment Video

Updated: Apr 10, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.

Alessandro Rossi1, Tuomo Tanttu2, Fay E Hudson3

  • 1School of Electrical Engineering & Telecommunications, University of New South Wales; a.rossi@unsw.edu.au.

Journal of Visualized Experiments : Jove
|June 13, 2015
PubMed
Summary

Researchers detail fabricating silicon quantum dots (QDs) using multi-layer-gated metal-oxide-semiconductor (MOS) technology. These QDs are crucial for quantum computing and precise quantized current generation in quantum metrology.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.4K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.2K

Related Experiment Videos

Last Updated: Apr 10, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.4K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.2K

Area of Science:

  • Solid State Physics
  • Quantum Electronics
  • Nanotechnology

Background:

  • Quantum mechanical effects impact nano-scale silicon transistors, degrading performance.
  • These quantum effects can be leveraged for novel quantum electronics.
  • Silicon metal-oxide-semiconductor (MOS) technology enables control of quantum dots (QDs).

Purpose of the Study:

  • To detail the fabrication protocol for silicon MOS QDs.
  • To present methods for device characterization post-fabrication.
  • To describe the setup for charge pumping experiments and showcase results.

Main Methods:

  • Fabrication of multi-layer-gated silicon MOS quantum dots.
  • Post-fabrication characterization techniques for device integrity.
  • Measurement setup for charge pumping experiments.

Main Results:

  • Demonstration of silicon MOS QDs suitable for quantum applications.
  • Successful characterization confirming device integrity.
  • Representative results of electric current quantization via charge pumping.

Conclusions:

  • Silicon MOS QD technology is a viable platform for quantum computing.
  • These devices can serve as accurate single-electron pumps for quantum metrology.
  • The presented fabrication and characterization methods are key for advancing these applications.