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Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.

E A Anyebe1, A M Sanchez2, S Hindmarsh2

  • 1†Physics Department, Lancaster University, Lancaster LA1 4YB, U.K.

Nano Letters
|June 19, 2015
PubMed
Summary

We grew high-quality Indium Arsenide Antimonide (InAsSb) semiconductor nanowires on graphite. These ultrahigh aspect ratio nanowires are promising for advanced optoelectronics and high-speed electronics.

Keywords:
InAsSbaspect ratiographenegraphitemolecular beam epitaxynanowireself-catalyzedvan der Waals

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Monolithic integration of Indium Arsenide Antimonide (InAsSb) semiconductor nanowires on graphitic substrates offers potential for cost-effective, high-performance, and flexible devices.
  • Achieving high aspect ratio InAsSb nanowires is challenging due to antimony (Sb) influencing growth dynamics, suppressing axial growth while promoting radial growth.

Purpose of the Study:

  • To realize high quality, vertically aligned, non-tapered InAsSb nanowires with ultrahigh aspect ratios.
  • To investigate the incorporation of antimony (Sb) in InAsSb nanowires grown on graphite substrates.
  • To explore the potential of graphite as a substrate for InAsSb nanowire growth for optoelectronic applications.

Main Methods:

  • Indium-droplet assisted molecular beam epitaxy (MBE) was employed for nanowire growth.
  • Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for structural characterization.
  • Low-temperature photoluminescence (PL) spectroscopy was utilized to analyze optical properties and confirm Sb incorporation.

Main Results:

  • High quality, vertically aligned, non-tapered InAsSb nanowires with Sb composition up to ~12% were successfully grown on graphite.
  • Photoluminescence measurements confirmed bright band-to-band emission, with a redshift indicating successful Sb incorporation.
  • The study demonstrated that graphite substrates are favorable for InAsSb nanowire growth, enabling ultrahigh aspect ratios.

Conclusions:

  • The successful growth of high-quality InAsSb nanowires with ultrahigh aspect ratios on graphite substrates has been achieved.
  • The findings highlight the potential of these nanowires for fabricating advanced optoelectronic and high-speed electronic devices.
  • Graphite substrates provide a promising platform for developing novel hybrid heterostructures based on InAsSb nanowires.