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Tuneable Magnetic Phase Transitions in Layered CeMn2Ge(2-x)Six Compounds.

M F Md Din1, J L Wang2, Z X Cheng3

  • 11] Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522, Australia [2] Department of Electrical &Electronic Engineering, Faculty of Engineering, National Defence University of Malaysia, Kem Sungai Besi, 57000 Kuala Lumpur, Malaysia.

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|June 20, 2015
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Summary
This summary is machine-generated.

This study investigates CeMn2Ge(2-x)Six compounds, revealing how silicon substitution alters magnetic properties. A transition from ferromagnetism to antiferromagnetism occurs with increasing silicon content.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Magnetism

Background:

  • Understanding the relationship between crystal structure and magnetic behavior is crucial for developing new magnetic materials.
  • Ternary germanides and silicides offer a versatile platform for tuning magnetic properties through compositional changes.

Purpose of the Study:

  • To investigate the structural and magnetic properties of CeMn2Ge(2-x)Six compounds.
  • To determine the effect of silicon substitution on the magnetic states and phase transitions.
  • To construct the magnetic phase diagram for the entire composition range.

Main Methods:

  • Synthesis and characterization of seven CeMn2Ge(2-x)Six compounds (x = 0.0-2.0).
  • Detailed structural analysis using X-ray diffraction.
  • Magnetic property measurements, including temperature-dependent magnetization.
  • High-resolution neutron and X-ray synchrotron radiation studies.
  • Analysis of critical behavior near magnetic phase transitions.

Main Results:

  • Silicon substitution leads to a monotonic decrease in lattice parameters (a and c) and unit cell volume.
  • A magnetic phase transition from ferromagnetism (Ge-rich) to antiferromagnetism (Si-rich) was observed.
  • The magnetic phase diagram revealed co-existence of ferromagnetic and antiferromagnetic states in specific compositions (e.g., CeMn2Ge1.2Si0.8).
  • Compounds with x = 0, 0.4, and 0.8 exhibited moderate isothermal magnetic entropy changes and second-order phase transitions near room temperature.
  • Critical behavior analysis for CeMn2Ge2 aligns with the three-dimensional Heisenberg model.

Conclusions:

  • Silicon substitution effectively modifies the structural and magnetic properties of CeMn2Ge(2-x)Six.
  • The observed magnetic phase diagram provides a comprehensive understanding of magnetic ordering in this system.
  • These findings contribute to the design of materials with tunable magnetic properties for potential applications.