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Updated: Apr 9, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Gentle quantitative measurement of helium density in nanobubbles in silicon by spectrum imaging
Kévin Alix1, Marie-Laure David1, Guillaume Lucas2
1Institut Pprime, UPR3346 CNRS-Université de Poitiers, 86962 Futuroscope-Chasseneuil, France.
Abstract:
We propose an original method for the determination of the physical properties of nanometer sized helium bubbles using spectrum imaging in an energy-filtered transmission electron microscope. Helium bubbles synthesized by high fluence implantation and thermal annealing in silicon are investigated. The acquisition parameters are determined to optimize both signal/noise ratio and time. The limitations to the extent of observable areas on a typical sample are explained. The necessary data correction and helium K-edge position measurement procedures are detailed and the accuracy of the method is discussed. Finally helium density maps are obtained and discussed.
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