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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
28.8K
Ultralow noise miniature external cavity semiconductor laser.
W Liang1, V S Ilchenko1, D Eliyahu1
1OEwaves Inc., 465 North Halstead Street, Suite 140, Pasadena, California 91107, USA.
Nature Communications
|June 25, 2015
Summary
Researchers developed a chip-scale laser with unprecedented spectral purity. This breakthrough offers a compact, stable laser source for advanced optical metrology applications, achieving a 30-Hz integral linewidth.
Area of Science:
- Photonics and Optical Engineering
- Semiconductor Lasers
- Metrology
Background:
- Advanced optical metrology requires lasers with high spectral purity and stability in compact, robust designs.
- Existing chip-scale lasers lack the sub-100 Hz linewidth necessary for demanding applications.
- Previous integrated laser efforts relied on bulky support equipment, limiting practical use.
Purpose of the Study:
- To demonstrate a heterogeneously integrated, chip-scale semiconductor laser with exceptional spectral purity.
- To achieve sub-100 Hz linewidth in a compact, self-contained laser system.
- To overcome the limitations of current integrated laser technologies for metrology.
Main Methods:
- Heterogeneous integration of semiconductor gain elements with optical microresonators.
- Utilizing optical microresonators as external cavities for noise reduction.
- Fabrication of a monolithic, chip-scale laser device.
Main Results:
- Achieved an integral linewidth of 30 Hz.
- Demonstrated an instantaneous linewidth below 1 Hz.
- Successfully realized a fully chip-scale laser system without external support equipment.
Conclusions:
- This work presents the first demonstration of a chip-scale laser with sub-100 Hz linewidth.
- The developed laser technology is suitable for advanced optical metrology and other applications requiring high spectral purity.
- Heterogeneous integration offers a viable path towards compact, high-performance laser sources.

