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Resonant tunnelling in a quantum oxide superlattice
Woo Seok Choi1, Sang A Lee2, Jeong Ho You3
11] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea.
Nature Communications
|June 25, 2015
Summary
Researchers demonstrate resonant tunneling in transition metal oxide superlattices, achieving negative differential resistance. This breakthrough enables a large resistance ratio for novel high-frequency logic devices.
Area of Science:
- Quantum mechanics
- Materials science
- Condensed matter physics
Background:
- Resonant tunneling is a quantum phenomenon crucial for high-speed electronics.
- Conventional semiconductor materials have dominated resonant tunneling research.
- Limited material choices have restricted the exploration of novel applications.
Purpose of the Study:
- To investigate resonant tunneling in transition metal oxide superlattices.
- To demonstrate negative differential resistance in oxide-based heterostructures.
- To explore novel applications for oxide materials in electronics.
Main Methods:
- Fabrication of a transition metal oxide superlattice with a lanthanum δ-doped SrTiO3 layer.
- Characterization of the superlattice's electrical transport properties.
- Analysis of the observed negative differential resistance and resistance switching behavior.
Main Results:
- Observation of clear resonant tunneling behavior and negative differential resistance in the oxide superlattice.
- Tunnelling occurred through an atomically thin, lanthanum δ-doped SrTiO3 layer.
- Achieved an exceptionally large resistance ratio (approximately 10^5) between high and low-resistance states.
Conclusions:
- Transition metal oxide superlattices can exhibit resonant tunneling, challenging previous material limitations.
- The combined resonant tunneling and resistance switching offers significant potential for electronic devices.
- Atomically thin δ-doped oxide superlattices provide unprecedented control for novel oxide-based high-frequency logic devices.
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