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Lead iodide perovskite light-emitting field-effect transistor.
Xin Yu Chin1, Daniele Cortecchia2,3, Jun Yin1,4
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Nature Communications
|June 26, 2015
Summary
Researchers studied methylammonium lead iodide perovskite (CH3NH3PbI3) transistors at low temperatures. This revealed intrinsic charge transport properties and enabled light-emitting field-effect transistors for new optoelectronic devices.
Area of Science:
- Materials Science
- Solid-State Physics
- Optoelectronics
Background:
- Solution-processable hybrid organic-inorganic perovskites are vital for photovoltaics and light emission.
- Determining intrinsic charge transport parameters is challenging due to film variability and device history.
Purpose of the Study:
- To eliminate ionic transport screening effects in methylammonium lead iodide perovskite (CH3NH3PbI3) transistors.
- To determine intrinsic charge transport parameters of CH3NH3PbI3.
- To demonstrate light-emitting field-effect transistors (LEFETs) for optoelectronic applications.
Main Methods:
- Fabrication and characterization of CH3NH3PbI3 field-effect transistors.
- Temperature-dependent electrical measurements down to cryogenic temperatures.
- Gate-dependent electroluminescence measurements.
Main Results:
- Ionic transport screening effects were eliminated by operating below 200 K.
- Field-effect carrier mobility increased by nearly two orders of magnitude, consistent with phonon scattering.
- Gate-dependent electroluminescence was observed, revealing the phase transition of CH3NH3PbI3.
Conclusions:
- Demonstrated CH3NH3PbI3 LEFETs provide intrinsic transport parameters for materials and solar cell optimization.
- This work paves the way for novel electro-optic devices, including room-temperature gated light-emitting diodes and lasers.
