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Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate
Lijun Li1, Inyeal Lee, Dongsuk Lim
1School of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
Abstract:
We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm(-1) with the layer lying on BN, and a narrower line width in comparison with those on a SiO2 substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 10(8). In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices.
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