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Microwave-assisted solution-liquid-solid growth of Ge1-xSnx nanowires with high tin content
Sven Barth1, Michael S Seifner, Johannes Bernardi
1Vienna University of Technology, Institute of Materials Chemistry, Getreidemarkt 9/BC/02, 1060 Vienna, Austria. sven.barth@tuwien.ac.at.
Chemical Communications (Cambridge, England)
|July 4, 2015
Abstract:
A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge1-xSnx) nanowires with constant diameter along their axis was developed. Ge1-xSnx nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.
