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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
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Dielectric Polarization in a Capacitor01:31

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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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Equivalent Capacitance01:19

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Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
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Related Experiment Video

Updated: Apr 7, 2026

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
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Graphene-Based Flexible and Transparent Tunable Capacitors.

Baoyuan Man1, Shicai Xu, Shouzheng Jiang

  • 1College of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China, byman@sdnu.edu.cn.

Nanoscale Research Letters
|July 4, 2015
PubMed
Summary

We developed a flexible, transparent capacitor using graphene and Bi1.5MgNb1.5O7 (BMN) thin films. This device exhibits excellent electric field tunable properties and stable performance under bending, showing promise for flexible electronics.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Graphene and Bi1.5MgNb1.5O7 (BMN) are promising materials for electronic devices.
  • Transparent and flexible electronic components are in high demand for next-generation applications.

Purpose of the Study:

  • To fabricate and characterize an electric field tunable, transparent, and flexible capacitor.
  • To investigate the performance of BMN thin films on graphene substrates compared to traditional substrates.

Main Methods:

  • Graphene films grown by chemical vapor deposition (CVD).
  • BMN thin films deposited on graphene using laser molecular beam epitaxy (LMBE).
  • Fabrication of flexible and transparent graphene-BMN-graphene capacitors.

Main Results:

  • BMN films on graphene exhibited superior crystallinity, morphology, and electrical properties (lower leakage current, loss tangent) compared to those on Au.
  • The fabricated capacitors demonstrated a high dielectric constant (113) and dielectric tunability (~40.7%) at 1.0 MV/cm.
  • The flexible capacitors maintained stable operation under bending radii as low as 10 mm and showed ~90% optical transparency.

Conclusions:

  • Graphene-BMN-graphene structures offer enhanced performance for thin-film capacitors.
  • The developed flexible and transparent capacitors are suitable for various flexible electronic device applications.