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Published on: December 21, 2015
Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam
Zhi Zhang1, Zhen-Yu Lu, Ping-Ping Chen
1Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia. j.zou@uq.edu.au.
Abstract:
In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two V/III ratio procedure consists of a first high V/III ratio growth step to prepare the nanowire foundation on the substrate surface, followed by a low V/III ratio step to induce the nanowire growth. By manipulating the V/III ratios in different steps, we have achieved the controlled growth of pure defect-free zinc-blende structured InAs nanowires on the GaAs {1̄1̄1̄} substrates. This study provides an approach to control not only the crystal structure of semiconductor nanowires, but also their structural qualities.
