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Related Experiment Video

Updated: Apr 7, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

1.4K

Ultra-high-Q thin-silicon nitride strip-loaded ring resonators.

L Stefan, M Bernard, R Guider

    Optics Letters
    |July 16, 2015
    PubMed
    Summary

    We developed novel silicon nitride (Si3N4) ring resonators on a silicon chip, achieving ultra-high quality factors. These strip-loaded devices minimize light scattering for enhanced performance in optical applications.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science and Engineering
    • Integrated Optics

    Background:

    • Ring resonators are crucial for optical signal processing.
    • Achieving ultra-high quality factors (UHQs) is essential for advanced photonic applications.
    • Traditional silicon nitride (Si3N4) devices face limitations in performance and fabrication.

    Purpose of the Study:

    • To design, fabricate, and characterize novel thin Si3N4 ring resonators.
    • To demonstrate the effectiveness of a strip-loaded configuration for enhanced optical performance.
    • To explore the potential of these resonators for nonlinear optics and quantum computing.

    Main Methods:

    • Monolithic integration of Si3N4 on a silicon chip.
    • Utilizing a strip-loaded resonator design to minimize lateral boundary scattering.

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    Last Updated: Apr 7, 2026

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  • Characterization of device performance at near-infrared (NIR) and C-band wavelengths.

    • Main Results:

    • Achieved UHQs of 3.7×10^6 in the NIR and Q factors up to 9×10^5 in the C-band.
    • Demonstrated performance with a significantly thinner Si3N4 guiding core (80 nm and 115 nm).
    • Observed reduced scattering losses due to the absence of etched lateral boundaries.

    Conclusions:

    • The strip-loaded Si3N4 ring resonators offer a promising platform for high-performance integrated photonics.
    • The achieved UHQs pave the way for applications in nonlinear frequency conversion and quantum computing.
    • Further improvements are expected to enhance device applicability within the material's transparency window.