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Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
Jui-Wei Hus1, Chien-Chia Chen1, Ming-Jui Lee1
1Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
Advanced Materials (Deerfield Beach, Fla.)
|July 17, 2015
Abstract:
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.
