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Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices
Fenglin Wang1, Petr Stepanov1, Mason Gray1
1†Department of Physics and Astronomy, ‡Department of Chemistry, and §Department of Chemical and Environmental Engineering, University of California, Riverside, Riverside, California 92521, United States.
Nano Letters
|July 17, 2015
Summary
Ionic liquid gating of suspended molybdenum disulfide (MoS2) transistors significantly enhances conductance. This method enables efficient charge induction and metal-insulator transitions in two-dimensional materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials like molybdenum disulfide (MoS2) offer unique electronic properties.
- Gating techniques are crucial for controlling charge density and device performance in 2D transistors.
- Suspended 2D materials present opportunities for enhanced electrostatic control due to accessible surfaces.
Purpose of the Study:
- To investigate the effectiveness of ionic liquid (IL) gating on suspended few-layer MoS2 transistors.
- To compare the performance of IL-gated suspended MoS2 devices with substrate-supported counterparts.
- To explore the charge induction mechanisms and potential phase transitions in these devices.
Main Methods:
- Fabrication of suspended few-layer MoS2 transistors.
- Application of ionic liquid (IL) for electrostatic gating.
- Electrical transport measurements to characterize device conductance and properties.
- Analysis of gate coupling efficiency and transport mechanisms.
Main Results:
- Suspended MoS2 transistors exhibited significantly improved conductance upon IL application compared to substrate-supported devices.
- High IL gate coupling efficiency of up to 4.6 × 10(13) cm(-2) V(-1) was measured.
- Electrical transport was dominated by contact properties, with Schottky emission identified as the key mechanism.
- Modulation of IL gate voltage induced a metal-insulator transition in the suspended MoS2 devices.
Conclusions:
- Suspended 2D materials allow for more efficient charge induction via IL gating.
- The observed metal-insulator transition highlights the potential for novel electronic phase control.
- Further optimization could lead to extremely high charge densities and new functionalities in 2D electronics.
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