Related Experiment Video
Updated: Apr 6, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
One-Dimensional Poole-Frenkel Conduction in the Single Defect Limit
Deng Pan1, Elliot J Fuller1, O Tolga Gül1
1Department of Physics and Astronomy, University of California at Irvine, Irvine, California 92697, United States.
Disorder in one-dimensional conductors was studied using semimetallic carbon nanotubes with single point defects. A modified Poole-Frenkel mechanism explains the observed high resistance and defect scattering in these systems.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- One-dimensional (1D) conductors are crucial for understanding quantum phenomena.
- Disorder significantly impacts electronic properties in 1D systems.
- Carbon nanotubes (CNTs) offer a near-ideal platform for studying 1D physics.
Purpose of the Study:
- To investigate the effects of single point defects on the electronic transport properties of semimetallic single-walled carbon nanotubes (SWNTs).
- To compare experimental findings with theoretical models of disorder in 1D conductors.
Main Methods:
- Fabrication and characterization of individual SWNTs before and after introducing single point defects.
- Transport measurements to analyze electrical conductance.
- Local Kelvin Probe force microscopy (LKPFM) to probe local electronic potential.
Main Results:
- Single point defects create wide (over 1.0 μm) high-resistance depletion regions in semimetallic SWNTs.
- Conductance through these depletion regions is governed by a modified, 1D Poole-Frenkel field-assisted emission mechanism.
- This mechanism effectively describes defect scattering and resistance in the semimetallic SWNT system.
Conclusions:
- The Poole-Frenkel mechanism provides a viable model for understanding defect-induced resistance in 1D semimetallic systems.
- This research bridges a gap between theoretical predictions and experimental observations of disorder in 1D conductors.
- The findings contribute to the fundamental understanding of electron transport in nanostructured materials.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Point, Line and Plane Defects
Debye–Huckel–Onsager Conductance Equation
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Kohlraush’s Law and its Applications
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...

