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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
V Srinivasa1, H Xu1, J M Taylor1
1Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA and National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
We developed a tunable method to entangle electron spins in silicon using a hybrid quantum dot system. This approach enables high-fidelity quantum gates for scalable quantum computing.
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