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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Rogue waves lead to the instability in GaN semiconductors
M E Yahia1, R E Tolba2, N A El-Bedwehy2
11] Faculty of Engineering and Natural Sciences, International University of Sarajevo (IUS), 71210, Ilidža, Sarajevo, Bosnia and Herzegovina [2] Center for Theoretical Physics, The British University in Egypt (BUE), El-Shorouk City, Cairo 11837, Egypt.
Abstract:
A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.
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