Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

836
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
836
P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.6K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.6K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

2.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
2.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026
Same author

Two-qubit logic and teleportation with mobile spin qubits in silicon.

Nature·2026
Same author

Evidence for a Spectral Break or Curvature in the Spectrum of Astrophysical Neutrinos from 5 TeV to 10 PeV.

Physical review letters·2026
Same author

Many-body interferometry with semiconductor spins.

Science (New York, N.Y.)·2026
Same author

Decoding structural fingerprints to elucidate the mechanism of action of anti-apoptotic protein Mcl-1.

SAR and QSAR in environmental research·2026

Related Experiment Video

Updated: Apr 6, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Ballistic Josephson junctions in edge-contacted graphene.

V E Calado1, S Goswami1, G Nanda1

  • 1Kavli Institute of Nanoscience, Delft University of Technology, Delft, GA 2600, The Netherlands.

Nature Nanotechnology
|July 28, 2015
PubMed
Summary

We developed novel graphene Josephson junctions using high-quality interfaces for ballistic transport. These junctions exhibit unique oscillations and sustained supercurrents over long distances, opening new research avenues.

More Related Videos

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

9.8K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.3K

Related Experiment Videos

Last Updated: Apr 6, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K
Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

9.8K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.3K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Electronics

Background:

  • Hybrid graphene-superconductor devices are crucial for fundamental research and potential applications.
  • Previous studies were limited by poor interface quality, diffusive transport, and low critical magnetic fields.
  • High-quality interfaces and ballistic transport are essential for advancing graphene-based superconducting devices.

Purpose of the Study:

  • To engineer and investigate graphene-based Josephson junctions with superior interface properties.
  • To explore the transport regime in high-quality graphene Josephson junctions.
  • To understand the behavior of supercurrents and quantum phenomena in these novel devices.

Main Methods:

  • Fabrication of graphene Josephson junctions utilizing 1D edge contacts of molybdenum rhenium.
  • Encapsulation of graphene in hexagonal boron nitride for enhanced quality.
  • Characterization of device performance, including critical current, carrier density dependence, and behavior in the quantum Hall regime.

Main Results:

  • Demonstrated well-defined, transparent graphene/superconductor interfaces with a high critical magnetic field (8 T at 4 K).
  • Observed ballistic transport in high-quality, encapsulated graphene.
  • Reported density-dependent critical current oscillations due to Fabry-Pérot cavity formation and supercurrents over distances up to 1.5 μm.
  • Observed broken symmetry states in the quantum Hall regime with persistent superconductivity.

Conclusions:

  • Engineered high-quality graphene Josephson junctions enabling ballistic transport and long-range supercurrents.
  • Revealed novel phenomena like carrier density-dependent oscillations and quantum Hall effects in these devices.
  • Opened new possibilities for exploiting graphene's Dirac nature in superconducting hybrid systems.