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Updated: Apr 6, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Optoelectrical Molybdenum Disulfide (MoS2)--Ferroelectric Memories
Alexey Lipatov1, Pankaj Sharma1, Alexei Gruverman1
1Department of Chemistry, ‡Department of Physics and Astronomy, and §Nebraska Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 68588, United States.
Abstract:
In this study, we fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on monolayer or few-layer molybdenum disulfide (MoS2) on a lead zirconium titanate (Pb(Zr,Ti)O3, PZT) substrate that was used as a gate dielectric. MoS2-PZT FETs exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that the interplay of polarization and interfacial phenomena strongly affects the electronic behavior and memory characteristics of MoS2-PZT FETs. We further demonstrate that MoS2-PZT memories have a number of advantages and unique features compared to their graphene-based counterparts as well as commercial ferroelectric random-access memories (FeRAMs), such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically. This dual optoelectrical operation of these memories can simplify the device architecture and offer additional practical functionalities, such as an instant optical erase of large data arrays that is unavailable for many conventional memories.
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