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Scanning-probe Single-electron Capacitance Spectroscopy
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A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip.

Kumjae Shin1, Dae sil Kang1, Sang hoon Lee2

  • 1Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Republic of Korea.

Ultramicroscopy
|August 2, 2015
PubMed
Summary

We developed a novel Tip-on-Gate Field-Effect Transistor (ToGoFET) probe for measuring thin layer capacitance. This method successfully detected electric fields on dielectric surfaces, enabling local capacitance measurements.

Keywords:
Amplitude modulationLocal capacitanceMetal-oxide-semiconductor transistorScanning probe microscopySurface electric field

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Nanotechnology

Background:

  • Accurate measurement of thin film capacitance is crucial for microelectronic device characterization.
  • Existing methods may lack the spatial resolution or sensitivity required for nanoscale dielectric layers.
  • Field-Effect Transistor (FET) based probes offer potential for high-resolution electrical measurements.

Purpose of the Study:

  • To introduce and validate a new method for measuring the capacitance of thin dielectric layers.
  • To demonstrate the capability of a Tip-on-Gate Field-Effect Transistor (ToGoFET) probe for surface electric field detection.
  • To enable non-destructive, localized capacitance measurements on buried structures.

Main Methods:

  • Fabrication of a ToGoFET probe by embedding a metal-oxide-semiconductor field-effect transistor (MOSFET) with an ion-implant channel onto a cantilever tip.
  • Utilizing the ToGoFET probe to detect alternating electric fields generated by a sinusoidal signal applied to buried metal lines beneath a dielectric layer.
  • Demodulation of the detected AC signal using a simple AC-to-DC converter to quantify the electric field.

Main Results:

  • Successful detection of an alternating electric field at the dielectric surface directly above a buried metal line.
  • Experimental validation of the ToGoFET probe's ability to sense electric fields through a dielectric layer.
  • Demonstration of the potential for measuring surface local capacitance with high spatial resolution.

Conclusions:

  • The ToGoFET probe provides a viable method for measuring electric fields and local capacitance on dielectric surfaces.
  • This technique holds promise for advanced characterization of microelectronic devices and materials.
  • Further development could lead to improved non-contact probing techniques for integrated circuits.