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Infrared light slows electron-glass dynamics in GeSbTe films by increasing carrier concentration. This highlights carrier concentration

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Amorphous Semiconductors

Background:

  • Electron-glass dynamics in disordered systems are complex and sensitive to various factors.
  • Anderson localization describes the behavior of electrons in disordered materials.
  • Germanium-antimony-tellurium (GeSbTe) films are technologically relevant amorphous semiconductors.

Purpose of the Study:

  • To investigate the effect of infrared illumination on the electron-glass dynamics of GeSbTe films.
  • To determine the primary factor influencing sluggish dynamics: carrier concentration or disorder.
  • To explore the role of many-body effects in the observed phenomena.

Main Methods:

  • Fabrication of Anderson-localized GeSbTe films.
  • Application of brief infrared illumination to alter carrier concentration.
  • Measurement of electron-glass dynamics and conductance changes.

Main Results:

  • Infrared illumination significantly slows down the electron-glass dynamics.
  • The slowing is directly correlated with an increase in carrier concentration and conductance.
  • Electron-glass dynamics proved more sensitive to carrier concentration than to the level of disorder.

Conclusions:

  • Carrier concentration is a dominant factor governing electron-glass dynamics in these films.
  • The sluggish dynamics suggest the involvement of many-body effects, potentially the orthogonality catastrophe.
  • Findings offer insights into the fundamental physics of electron localization and transport in amorphous materials.