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Updated: Apr 5, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Negative Differential Resistance Probe for Interdot Interactions in a Double Quantum Dot Array
Roni Pozner1, Efrat Lifshitz1, Uri Peskin1
1†Schulich Faculty of Chemistry, ‡Solid State Institute, ¶Russell Berrie Nanotechnology Institute, and ∥Lise Meitner Center for Computational Quantum Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Abstract:
Colloidal quantum dots are free-standing nanostructures with chemically tunable electronic properties. In this work, we consider a new STM tip-double quantum dot (DQD)-surface setup with a unique connectivity, in which the tip is coupled to a single dot and the coupling to the surface is shared by both dots. Our theoretical analysis reveals a unique negative differential resistance (NDR) effect attributed to destructive interference during charge transfer from the DQD to the surface. This NDR can be used as a sensitive probe for interdot interactions in DQD arrays.
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