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Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

Chenguang He1, Zhixin Qin1, Fujun Xu1

  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.

Scientific Reports
|August 13, 2015
PubMed

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